JCS8N60F Datasheet. Specs and Replacement

Type Designator: JCS8N60F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220MF

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JCS8N60F datasheet

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 jcs8n60s jcs8n60b jcs8n60c jcs8n60f.pdf pdf_icon

JCS8N60F

N R N-CHANNEL MOSFET JCS8N60 Package MAIN CHARACTERISTICS 7.5 A ID 600 V VDSS Rdson 1.2 @Vgs=10V 54 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA... See More ⇒

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JCS8N60F

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JCS8N60F

N R N-CHANNEL MOSFET JCS8N60C Package MAIN CHARACTERISTICS ID 7.0 A VDSS 600 V Rdson 1.6 @Vgs=10V Qg 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATU... See More ⇒

 0.2. Size:809K  jilin sino
 jcs8n60bb jcs8n60sb jcs8n60cb jcs8n60fb.pdf pdf_icon

JCS8N60F

N R N-CHANNEL MOSFET JCS8N60B MAIN CHARACTERISTICS Package ID 7.0 A VDSS 600 V Rdson-max 1.2 @Vgs=10V Qg-typ 25 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L... See More ⇒

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Detailed specifications: HY3210P, HY3210M, HY3210B, HY3210PS, HY3210PM, JCS8N60S, JCS8N60B, JCS8N60C, IRFP460, ME4953, SI4914DY, SSP60N05, SSP60N06, SUV90N06-05, SVF740T, SVF740F, AOB9N70

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