ME4953 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: ME4953

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ME4953 Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4953 is the Dual P-Channel logic enhancement mode power RDS(ON) 60m @VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON) 90m @VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

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ME4953/ME4953-G Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 60m @VGS=-10V The ME4953 is the Dual P-Channel logic enhancement mode power RDS(ON) 90m @VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is espec

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ME4954/ME4954-G Dual N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4954 is the Dual N-Channel logic enhancement mode power RDS(ON) 80m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 98m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely

Otros transistores... HY3210M , HY3210B , HY3210PS , HY3210PM , JCS8N60S , JCS8N60B , JCS8N60C , JCS8N60F , IRF1404 , SI4914DY , SSP60N05 , SSP60N06 , SUV90N06-05 , SVF740T , SVF740F , AOB9N70 , AOTF29S50L .