ME4953 Todos los transistores

 

ME4953 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ME4953
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 14 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: SOP8
 

 Búsqueda de reemplazo de ME4953 MOSFET

   - Selección ⓘ de transistores por parámetros

 

ME4953 Datasheet (PDF)

 ..1. Size:373K  1
me4953.pdf pdf_icon

ME4953

ME4953 Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4953 is the Dual P-Channel logic enhancement mode power RDS(ON)60m@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)90m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

 ..2. Size:1461K  matsuki electric
me4953 me4953-g.pdf pdf_icon

ME4953

ME4953/ME4953-G Dual P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)60m@VGS=-10V The ME4953 is the Dual P-Channel logic enhancement mode power RDS(ON)90m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is espec

 9.1. Size:1057K  matsuki electric
me4954 me4954-g.pdf pdf_icon

ME4953

ME4954/ME4954-G Dual N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4954 is the Dual N-Channel logic enhancement mode power RDS(ON)80m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)98m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely

Otros transistores... HY3210M , HY3210B , HY3210PS , HY3210PM , JCS8N60S , JCS8N60B , JCS8N60C , JCS8N60F , IRF1404 , SI4914DY , SSP60N05 , SSP60N06 , SUV90N06-05 , SVF740T , SVF740F , AOB9N70 , AOTF29S50L .

History: MMDF3P03HDR | 2SK1582

 

 
Back to Top

 


 
.