ME4953 Datasheet. Specs and Replacement

Type Designator: ME4953  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: SOP8

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ME4953 datasheet

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ME4953

ME4953 Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4953 is the Dual P-Channel logic enhancement mode power RDS(ON) 60m @VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON) 90m @VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(... See More ⇒

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ME4953

ME4953/ME4953-G Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 60m @VGS=-10V The ME4953 is the Dual P-Channel logic enhancement mode power RDS(ON) 90m @VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is espec... See More ⇒

 9.1. Size:1057K  matsuki electric
 me4954 me4954-g.pdf pdf_icon

ME4953

ME4954/ME4954-G Dual N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4954 is the Dual N-Channel logic enhancement mode power RDS(ON) 80m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 98m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely... See More ⇒

Detailed specifications: HY3210M, HY3210B, HY3210PS, HY3210PM, JCS8N60S, JCS8N60B, JCS8N60C, JCS8N60F, IRF640, SI4914DY, SSP60N05, SSP60N06, SUV90N06-05, SVF740T, SVF740F, AOB9N70, AOTF29S50L

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