All MOSFET. ME4953 Datasheet


ME4953 MOSFET. Datasheet pdf. Equivalent

Type Designator: ME4953

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 5.3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 14 nC

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 70 pF

Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm

Package: SOP8

ME4953 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


ME4953 Datasheet (PDF)

0.1. me4953.pdf Size:373K _1


ME4953 Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4953 is the Dual P-Channel logic enhancement mode power RDS(ON)60m@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)90m@VGS=-4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .


Back to Top