SI4914DY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI4914DY
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 13 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: SO8

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SI4914DY Datasheet (PDF)

..1. Size:132K 1
si4914dy.pdf

Si4914DYNew ProductVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY LITTLE FOOT Plus Integrated SchottkyVDS (V) rDS(on) ()ID (A) 100 % Rg Tested0.023 at VGS = 10 V 7.0Channel-1RoHS0.032 at VGS = 4.5 V 5.6APPLICATIONS COMPLIANT300.020 at VGS = 10 V 7.4 Logic DC/DCChannel-20.027 at VGS = 4.5 V

..2. Size:101K vishay
si4914dy.pdf

8.1. Size:272K vishay
si4914bdy.pdf

Si4914BDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.021 at VGS = 10 V 8.4 LITTLE FOOT Plus Integrated SchottkyChannel-1 6.70.027 at VGS = 4.5 V 7.4 100 % Rg and UIS Tested30 Compliant to RoHS Directive 2002/

8.2. Size:271K vishay
si4914bd.pdf

9.1. Size:245K vishay
si4913dy.pdf

Si4913DYVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.015 at VGS = - 4.5 V - 9.4 TrenchFET Power MOSFET0.019 at VGS = - 2.5 V - 20 - 8.4 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = - 1.8 V - 7.5APPLICATIONS Load SwitchingS1 S2

9.2. Size:258K vishay
si4916dy.pdf

Si4916DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.018 at VGS = 10 V 10 LITTLE FOOT Plus Integrated SchottkyChannel-1 6.60.023 at VGS = 4.5 V 8.5 100 % Rg Tested300.018 at VGS = 10 V 10.5Channel-2 8.9APPL

9.3. Size:239K vishay
si4910dy.pdf

Si4910DYVishay SiliconixDual N-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.027 at VGS = 10 V 6.0 TrenchFET Power MOSFET40 9.6 100 % Rg and UIS Tested0.032 at VGS = 4.5 V 4.8APPLICATIONS CCFL InverterD1 D2SO-8S1 1 D18G1 2 D17S2 3 D26G1

9.4. Size:1705K cn vbsemi
si4913dy.pdf

SI4913DYwww.VBsemi.twDual P-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.018 at VGS = - 4.5 V- 8.9 TrenchFET Power MOSFET0.022 at VGS = - 2.5 V- 20 - 8.1 Advanced High Cell Density Process 0.030 at VGS = - 1.8 V- 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICA

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