SI4914DY MOSFET. Datasheet pdf. Equivalent
Type Designator: SI4914DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 5.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.6 nC
trⓘ - Rise Time: 13 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: SO8
SI4914DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4914DY Datasheet (PDF)
si4914dy.pdf
Si4914DYNew ProductVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY LITTLE FOOT Plus Integrated SchottkyVDS (V) rDS(on) ()ID (A) 100 % Rg Tested0.023 at VGS = 10 V 7.0Channel-1RoHS0.032 at VGS = 4.5 V 5.6APPLICATIONS COMPLIANT300.020 at VGS = 10 V 7.4 Logic DC/DCChannel-20.027 at VGS = 4.5 V
si4914dy.pdf
Si4914DYNew ProductVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY LITTLE FOOT Plus Integrated SchottkyVDS (V) rDS(on) ()ID (A) 100 % Rg Tested0.023 at VGS = 10 V 7.0Channel-1RoHS0.032 at VGS = 4.5 V 5.6APPLICATIONS COMPLIANT300.020 at VGS = 10 V 7.4 Logic DC/DCChannel-20.027 at VGS = 4.5 V
si4914bdy.pdf
Si4914BDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.021 at VGS = 10 V 8.4 LITTLE FOOT Plus Integrated SchottkyChannel-1 6.70.027 at VGS = 4.5 V 7.4 100 % Rg and UIS Tested30 Compliant to RoHS Directive 2002/
si4914bd.pdf
Si4914BDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.021 at VGS = 10 V 8.4 LITTLE FOOT Plus Integrated SchottkyChannel-1 6.70.027 at VGS = 4.5 V 7.4 100 % Rg and UIS Tested30 Compliant to RoHS Directive 2002/
si4913dy.pdf
Si4913DYVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.015 at VGS = - 4.5 V - 9.4 TrenchFET Power MOSFET0.019 at VGS = - 2.5 V - 20 - 8.4 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = - 1.8 V - 7.5APPLICATIONS Load SwitchingS1 S2
si4916dy.pdf
Si4916DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.018 at VGS = 10 V 10 LITTLE FOOT Plus Integrated SchottkyChannel-1 6.60.023 at VGS = 4.5 V 8.5 100 % Rg Tested300.018 at VGS = 10 V 10.5Channel-2 8.9APPL
si4910dy.pdf
Si4910DYVishay SiliconixDual N-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.027 at VGS = 10 V 6.0 TrenchFET Power MOSFET40 9.6 100 % Rg and UIS Tested0.032 at VGS = 4.5 V 4.8APPLICATIONS CCFL InverterD1 D2SO-8S1 1 D18G1 2 D17S2 3 D26G1
si4913dy.pdf
SI4913DYwww.VBsemi.twDual P-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.018 at VGS = - 4.5 V- 8.9 TrenchFET Power MOSFET0.022 at VGS = - 2.5 V- 20 - 8.1 Advanced High Cell Density Process 0.030 at VGS = - 1.8 V- 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICA
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: MTP3055E
History: MTP3055E
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