SI4914DY MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI4914DY
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 13 ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.023 Ohm
Тип корпуса: SO8
SI4914DY Datasheet (PDF)
si4914dy.pdf
Si4914DYNew ProductVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY LITTLE FOOT Plus Integrated SchottkyVDS (V) rDS(on) ()ID (A) 100 % Rg Tested0.023 at VGS = 10 V 7.0Channel-1RoHS0.032 at VGS = 4.5 V 5.6APPLICATIONS COMPLIANT300.020 at VGS = 10 V 7.4 Logic DC/DCChannel-20.027 at VGS = 4.5 V
si4914dy.pdf
Si4914DYNew ProductVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY LITTLE FOOT Plus Integrated SchottkyVDS (V) rDS(on) ()ID (A) 100 % Rg Tested0.023 at VGS = 10 V 7.0Channel-1RoHS0.032 at VGS = 4.5 V 5.6APPLICATIONS COMPLIANT300.020 at VGS = 10 V 7.4 Logic DC/DCChannel-20.027 at VGS = 4.5 V
si4914bdy.pdf
Si4914BDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.021 at VGS = 10 V 8.4 LITTLE FOOT Plus Integrated SchottkyChannel-1 6.70.027 at VGS = 4.5 V 7.4 100 % Rg and UIS Tested30 Compliant to RoHS Directive 2002/
si4914bd.pdf
Si4914BDYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.021 at VGS = 10 V 8.4 LITTLE FOOT Plus Integrated SchottkyChannel-1 6.70.027 at VGS = 4.5 V 7.4 100 % Rg and UIS Tested30 Compliant to RoHS Directive 2002/
si4913dy.pdf
Si4913DYVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.015 at VGS = - 4.5 V - 9.4 TrenchFET Power MOSFET0.019 at VGS = - 2.5 V - 20 - 8.4 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = - 1.8 V - 7.5APPLICATIONS Load SwitchingS1 S2
si4916dy.pdf
Si4916DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.018 at VGS = 10 V 10 LITTLE FOOT Plus Integrated SchottkyChannel-1 6.60.023 at VGS = 4.5 V 8.5 100 % Rg Tested300.018 at VGS = 10 V 10.5Channel-2 8.9APPL
si4910dy.pdf
Si4910DYVishay SiliconixDual N-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.027 at VGS = 10 V 6.0 TrenchFET Power MOSFET40 9.6 100 % Rg and UIS Tested0.032 at VGS = 4.5 V 4.8APPLICATIONS CCFL InverterD1 D2SO-8S1 1 D18G1 2 D17S2 3 D26G1
si4913dy.pdf
SI4913DYwww.VBsemi.twDual P-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.018 at VGS = - 4.5 V- 8.9 TrenchFET Power MOSFET0.022 at VGS = - 2.5 V- 20 - 8.1 Advanced High Cell Density Process 0.030 at VGS = - 1.8 V- 3.6 Compliant to RoHS Directive 2002/95/ECAPPLICA
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918