JCS650S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: JCS650S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 158 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 28 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 251 nS

Cossⓘ - Capacitancia de salida: 362 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm

Encapsulados: TO263

 Búsqueda de reemplazo de JCS650S MOSFET

- Selecciónⓘ de transistores por parámetros

 

JCS650S datasheet

 ..1. Size:488K  1
 jcs650c jcs650f jcs650s.pdf pdf_icon

JCS650S

N N- CHANNEL MOSFET R JCS650 MAIN CHARACTERISTICS Package ID 28.0A VDSS 200 V Rdson @Vgs=10V 0.085 Qg 103nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA

 ..2. Size:947K  jilin sino
 jcs650c jcs650f jcs650s.pdf pdf_icon

JCS650S

N N- CHANNEL MOSFET R JCS650 MAIN CHARACTERISTICS Package ID 28.0A VDSS 200 V Rdson-max 85m @Vgs=10V Qg-typ 103nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 ..3. Size:255K  inchange semiconductor
 jcs650s.pdf pdf_icon

JCS650S

isc N-Channel MOSFET Transistor JCS650S FEATURES Drain Current I = 28A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =85m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

Otros transistores... SVF740F, AOB9N70, AOTF29S50L, AOTF9N70L, AOW66412, FMV60N190S2HF, JCS650C, JCS650F, 7N65, R6002END3, R6003KND3, R6004JND3, R6004JNJ, R6004JNX, R6006JND3, R6006JNJ, R6006JNX