JCS650S Datasheet. Specs and Replacement
Type Designator: JCS650S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 158 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 251 nS
Cossⓘ - Output Capacitance: 362 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TO263
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JCS650S datasheet
jcs650c jcs650f jcs650s.pdf
N N- CHANNEL MOSFET R JCS650 MAIN CHARACTERISTICS Package ID 28.0A VDSS 200 V Rdson @Vgs=10V 0.085 Qg 103nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA... See More ⇒
jcs650c jcs650f jcs650s.pdf
N N- CHANNEL MOSFET R JCS650 MAIN CHARACTERISTICS Package ID 28.0A VDSS 200 V Rdson-max 85m @Vgs=10V Qg-typ 103nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge ... See More ⇒
jcs650s.pdf
isc N-Channel MOSFET Transistor JCS650S FEATURES Drain Current I = 28A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =85m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒
Detailed specifications: SVF740F, AOB9N70, AOTF29S50L, AOTF9N70L, AOW66412, FMV60N190S2HF, JCS650C, JCS650F, 7N65, R6002END3, R6003KND3, R6004JND3, R6004JNJ, R6004JNX, R6006JND3, R6006JNJ, R6006JNX
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