JCS650S Spec and Replacement
Type Designator: JCS650S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 158 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 251 nS
Cossⓘ - Output Capacitance: 362 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: TO263
JCS650S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS650S Specs
jcs650c jcs650f jcs650s.pdf
N N- CHANNEL MOSFET R JCS650 MAIN CHARACTERISTICS Package ID 28.0A VDSS 200 V Rdson @Vgs=10V 0.085 Qg 103nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA... See More ⇒
jcs650c jcs650f jcs650s.pdf
N N- CHANNEL MOSFET R JCS650 MAIN CHARACTERISTICS Package ID 28.0A VDSS 200 V Rdson-max 85m @Vgs=10V Qg-typ 103nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge ... See More ⇒
jcs650s.pdf
isc N-Channel MOSFET Transistor JCS650S FEATURES Drain Current I = 28A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =85m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒
Detailed specifications: SVF740F , AOB9N70 , AOTF29S50L , AOTF9N70L , AOW66412 , FMV60N190S2HF , JCS650C , JCS650F , 7N65 , R6002END3 , R6003KND3 , R6004JND3 , R6004JNJ , R6004JNX , R6006JND3 , R6006JNJ , R6006JNX .
History: UTT50P10 | JCS4N60F | 2SK962-01
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