APT30M36B2FLL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT30M36B2FLL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 568 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 84 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 31 nS
Cossⓘ - Capacitancia de salida: 1540 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
Encapsulados: TO-247
Búsqueda de reemplazo de APT30M36B2FLL MOSFET
- Selecciónⓘ de transistores por parámetros
APT30M36B2FLL datasheet
apt30m36b2fll apt30m36lfll.pdf
APT30M36B2FLL APT30M36LFLL 300V 84A 0.036 R FREDFET POWER MOS 7 FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switchin
apt30m36b2fll.pdf
isc N-Channel MOSFET Transistor APT30M36B2FLL FEATURES Drain Current I = 84A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Static Drain-Source On-Resistance R =0.036 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
apt30m36lll apt30m36b2ll.pdf
APT30M36B2LL APT30M36LLL 300V 84A 0.036W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast s
apt30m36b2ll.pdf
APT30M36B2LL APT30M36LLL 300V 84A 0.036W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast s
Otros transistores... STK0160 , 23N50 , APT10M09LVFR , APT20M16LFLL , APT20M18LVFR , APT20M18LVR , APT20M20LFLL , APT30M30B2FLL , RFP50N06 , APT30M36LFLL , APT30M36LLL , APT30M61BFLL , APT30M75BFLL , APT4014BVFR , APT4020BVFR , APT47N65BC3 , APT5010LFLL .
History: SFT1350 | SFT1440 | WPM1480 | APT30M75BFLL
History: SFT1350 | SFT1440 | WPM1480 | APT30M75BFLL
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E | ASW65R095EFD | ASW65R046EFD | ASW65R041EFDA | ASW65R041E | ASW60R150E | ASW60R090EFDA
Popular searches
datasheet mosfet | 2sk2586 | 13005 transistor | ecg123a | irfp360 | bc108 equivalent | irfp4568 | mj15004
