APT30M36B2FLL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APT30M36B2FLL
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 568 W
Предельно допустимое напряжение сток-исток |Uds|: 300 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 84 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 115 nC
Время нарастания (tr): 31 ns
Выходная емкость (Cd): 1540 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.036 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT30M36B2FLL
APT30M36B2FLL Datasheet (PDF)
apt30m36b2fll apt30m36lfll.pdf
APT30M36B2FLLAPT30M36LFLL300V 84A 0.036RFREDFET POWER MOS 7 FREDFETB2FLLPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switchin
apt30m36b2fll.pdf
isc N-Channel MOSFET Transistor APT30M36B2FLLFEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.036(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
apt30m36lll apt30m36b2ll.pdf
APT30M36B2LLAPT30M36LLL300V 84A 0.036WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast s
apt30m36b2ll.pdf
APT30M36B2LLAPT30M36LLL300V 84A 0.036WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast s
apt30m36b2ll.pdf
isc N-Channel MOSFET Transistor APT30M36B2LLFEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.036(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
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