APT30M36B2FLL. Аналоги и основные параметры
Наименование производителя: APT30M36B2FLL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 568 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 300 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 84 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 31 ns
Cossⓘ - Выходная емкость: 1540 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.036 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT30M36B2FLL
- подборⓘ MOSFET транзистора по параметрам
APT30M36B2FLL даташит
apt30m36b2fll apt30m36lfll.pdf
APT30M36B2FLL APT30M36LFLL 300V 84A 0.036 R FREDFET POWER MOS 7 FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switchin
apt30m36b2fll.pdf
isc N-Channel MOSFET Transistor APT30M36B2FLL FEATURES Drain Current I = 84A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Static Drain-Source On-Resistance R =0.036 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general
apt30m36lll apt30m36b2ll.pdf
APT30M36B2LL APT30M36LLL 300V 84A 0.036W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast s
apt30m36b2ll.pdf
APT30M36B2LL APT30M36LLL 300V 84A 0.036W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast s
Другие MOSFET... STK0160 , 23N50 , APT10M09LVFR , APT20M16LFLL , APT20M18LVFR , APT20M18LVR , APT20M20LFLL , APT30M30B2FLL , RFP50N06 , APT30M36LFLL , APT30M36LLL , APT30M61BFLL , APT30M75BFLL , APT4014BVFR , APT4020BVFR , APT47N65BC3 , APT5010LFLL .
History: HFP17N10 | FRM230
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