APT30M36B2FLL MOSFET. Datasheet pdf. Equivalent
Type Designator: APT30M36B2FLL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 568 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 84 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 115 nC
trⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 1540 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: TO-247
APT30M36B2FLL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT30M36B2FLL Datasheet (PDF)
apt30m36b2fll apt30m36lfll.pdf
APT30M36B2FLLAPT30M36LFLL300V 84A 0.036RFREDFET POWER MOS 7 FREDFETB2FLLPower MOS 7 is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switchin
apt30m36b2fll.pdf
isc N-Channel MOSFET Transistor APT30M36B2FLLFEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.036(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
apt30m36lll apt30m36b2ll.pdf
APT30M36B2LLAPT30M36LLL300V 84A 0.036WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast s
apt30m36b2ll.pdf
APT30M36B2LLAPT30M36LLL300V 84A 0.036WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast s
apt30m36b2ll.pdf
isc N-Channel MOSFET Transistor APT30M36B2LLFEATURESDrain Current I = 84A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.036(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
