APT47N65BC3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APT47N65BC3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 417 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 47 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 2565 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TO-247

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APT47N65BC3 Datasheet (PDF)

..1. Size:376K inchange semiconductor
apt47n65bc3.pdf

isc N-Channel MOSFET Transistor APT47N65BC3FEATURESDrain Current I =47A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =0.07(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

0.1. Size:179K microsemi
apt47n65bc3g.pdf

APT47N65BC3600V 47A 0.070Super Junction MOSFETCOOLMOSPower SemiconductorsD3 Ultra low RDS(ON) Increased Power Dissipation Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated TO-247 or Surface Mount D3PAK PackageMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified. Symbol Parameter APT47N65BC3 UNITVDSSDrain-So

7.1. Size:168K apt
apt47n60bc3.pdf

APT47N60BC3APT47N60SC3600V 47A 0.070Super Junction MOSFETD3PAKTO-247COOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller CapacitanceD Ultra Low Gate Charge, Qg Avalanche Energy RatedG TO-247 or Surface Mount D3PAK PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT47N60BC3_SC3

7.2. Size:402K apt
apt47n60bcfg.pdf

FINAL DATA SHEET 600V 46A 0.083 APT47N60BCF APT47N60SCF APT47N60BCFG* APT47N60SCFG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction FREDFET (B)COOLMOSPower SemiconductorsD3PAK Ultra Low RDS(ON) Intrinsic Fast-Recovery Body Diode(S) Low Miller Capacitance Extreme Low Reverse Recovery Charge Ultra Low Gate Charge, Qg Ideal For Z

7.3. Size:225K microsemi
apt47n60bc3g apt47n60sc3g.pdf

APT47N60BC3(G) APT47N60SC3(G)600V 47A 0.070Super Junction MOSFET D3PAK Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Popular TO-247 or Surface Mount D3 package.G RoHS Compliant SMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified. Symbol Parameter APT47N60B

7.4. Size:376K inchange semiconductor
apt47n60bc3.pdf

isc N-Channel MOSFET Transistor APT47N60BC3FEATURESDrain Current I =47A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.07(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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