APT47N65BC3 MOSFET. Datasheet pdf. Equivalent
Type Designator: APT47N65BC3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 417 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
|Id|ⓘ - Maximum Drain Current: 47 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 260 nC
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 2565 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO-247
APT47N65BC3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT47N65BC3 Datasheet (PDF)
apt47n65bc3.pdf
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isc N-Channel MOSFET Transistor APT47N65BC3FEATURESDrain Current I =47A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =0.07(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
apt47n65bc3g.pdf
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APT47N65BC3600V 47A 0.070Super Junction MOSFETCOOLMOSPower SemiconductorsD3 Ultra low RDS(ON) Increased Power Dissipation Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated TO-247 or Surface Mount D3PAK PackageMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified. Symbol Parameter APT47N65BC3 UNITVDSSDrain-So
apt47n60bc3.pdf
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APT47N60BC3APT47N60SC3600V 47A 0.070Super Junction MOSFETD3PAKTO-247COOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller CapacitanceD Ultra Low Gate Charge, Qg Avalanche Energy RatedG TO-247 or Surface Mount D3PAK PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT47N60BC3_SC3
apt47n60bcfg.pdf
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FINAL DATA SHEET 600V 46A 0.083 APT47N60BCF APT47N60SCF APT47N60BCFG* APT47N60SCFG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction FREDFET (B)COOLMOSPower SemiconductorsD3PAK Ultra Low RDS(ON) Intrinsic Fast-Recovery Body Diode(S) Low Miller Capacitance Extreme Low Reverse Recovery Charge Ultra Low Gate Charge, Qg Ideal For Z
apt47n60bc3g apt47n60sc3g.pdf
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APT47N60BC3(G) APT47N60SC3(G)600V 47A 0.070Super Junction MOSFET D3PAK Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Popular TO-247 or Surface Mount D3 package.G RoHS Compliant SMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified. Symbol Parameter APT47N60B
apt47n60bc3.pdf
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isc N-Channel MOSFET Transistor APT47N60BC3FEATURESDrain Current I =47A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.07(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: LSB55R066GT