R6009KNJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: R6009KNJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 94 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.535 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET R6009KNJ

R6009KNJ Datasheet (PDF)

..1. Size:1211K rohm
r6009knj.pdf

R6009KNJDatasheetNch 600V 9A Power MOSFETlOutlinel TO-263VDSS600V SC-83RDS(on)(Max.)0.535 LPT(S)ID9APD94W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbossed PackingT

..2. Size:255K inchange semiconductor
r6009knj.pdf

isc N-Channel MOSFET Transistor R6009KNJFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 535m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

7.1. Size:1440K rohm
r6009knx.pdf

R6009KNXDatasheetNch 600V 9A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.535 TO-220FMID9APD 48W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Bulk Reel size (mm) -lApp

7.2. Size:252K inchange semiconductor
r6009knx.pdf

isc N-Channel MOSFET Transistor R6009KNXFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 535m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

9.1. Size:784K rohm
r6009enj.pdf

R6009ENJ Nch 600V 9A Power MOSFET Data SheetlOutline(2) VDSS600VLPT(S)(SC-83)RDS(on) (Max.)0.535WID9A(1) PD40W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-fr

9.2. Size:1480K rohm
r6009jnd3.pdf

R6009JND3DatasheetNch 600V 9A Power MOSFETlOutlinel TO-252VDSS600VRDS(on)(Max.)0.585ID9APD125W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPa

9.3. Size:2104K rohm
r6009jnx.pdf

R6009JNXDatasheetNch 600V 9A Power MOSFETlOutlinel TO-220FMVDSS600VRDS(on)(Max.)0.585ID9APD53W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPa

9.4. Size:812K rohm
r6009enx.pdf

R6009ENX Nch 600V 9A Power MOSFET Data SheetlOutlineVDSS600V TO-220FMRDS(on) (Max.)0.535WID9(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead p

9.5. Size:1486K rohm
r6009jnj.pdf

R6009JNJDatasheetNch 600V 9A Power MOSFETlOutlinel LPT(S)VDSS600VRDS(on)(Max.)0.585ID9APD125W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPac

9.6. Size:255K inchange semiconductor
r6009enj.pdf

isc N-Channel MOSFET Transistor R6009ENJFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 535m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

9.7. Size:266K inchange semiconductor
r6009jnd3.pdf

isc N-Channel MOSFET Transistor R6009JND3FEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 585m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

9.8. Size:252K inchange semiconductor
r6009jnx.pdf

isc N-Channel MOSFET Transistor R6009JNXFEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 585m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.9. Size:252K inchange semiconductor
r6009enx.pdf

isc N-Channel MOSFET Transistor R6009ENXFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 535m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

9.10. Size:255K inchange semiconductor
r6009jnj.pdf

isc N-Channel MOSFET Transistor R6009JNJFEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 585m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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