R6009KNJ MOSFET. Datasheet pdf. Equivalent
Type Designator: R6009KNJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16.5 nC
trⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.535 Ohm
Package: TO-263
R6009KNJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R6009KNJ Datasheet (PDF)
r6009knj.pdf
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R6009KNJDatasheetNch 600V 9A Power MOSFETlOutlinel TO-263VDSS600V SC-83RDS(on)(Max.)0.535 LPT(S)ID9APD94W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbossed PackingT
r6009knj.pdf
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isc N-Channel MOSFET Transistor R6009KNJFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 535m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6009knx.pdf
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R6009KNXDatasheetNch 600V 9A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.535 TO-220FMID9APD 48W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Bulk Reel size (mm) -lApp
r6009knx.pdf
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isc N-Channel MOSFET Transistor R6009KNXFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 535m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6009enj.pdf
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R6009ENJ Nch 600V 9A Power MOSFET Data SheetlOutline(2) VDSS600VLPT(S)(SC-83)RDS(on) (Max.)0.535WID9A(1) PD40W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-fr
r6009jnd3.pdf
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R6009JND3DatasheetNch 600V 9A Power MOSFETlOutlinel TO-252VDSS600VRDS(on)(Max.)0.585ID9APD125W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPa
r6009jnx.pdf
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R6009JNXDatasheetNch 600V 9A Power MOSFETlOutlinel TO-220FMVDSS600VRDS(on)(Max.)0.585ID9APD53W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPa
r6009enx.pdf
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R6009ENX Nch 600V 9A Power MOSFET Data SheetlOutlineVDSS600V TO-220FMRDS(on) (Max.)0.535WID9(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead p
r6009jnj.pdf
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R6009JNJDatasheetNch 600V 9A Power MOSFETlOutlinel LPT(S)VDSS600VRDS(on)(Max.)0.585ID9APD125W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPac
r6009enj.pdf
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isc N-Channel MOSFET Transistor R6009ENJFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 535m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6009jnd3.pdf
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isc N-Channel MOSFET Transistor R6009JND3FEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 585m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6009jnx.pdf
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isc N-Channel MOSFET Transistor R6009JNXFEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 585m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
r6009enx.pdf
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isc N-Channel MOSFET Transistor R6009ENXFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 535m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6009jnj.pdf
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isc N-Channel MOSFET Transistor R6009JNJFEATURESDrain Current I =9A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 585m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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