R6009KNJ - описание и поиск аналогов

R6009KNJ Datasheet Nch 600V 9A Power MOSFET lOutline l TO-263 VDSS 600V SC-83 RDS(on)(Max.) 0.535 LPT(S) ID 9A PD 94W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Embossed Packing T

isc N-Channel MOSFET Transistor R6009KNJ FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 535m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

R6009KNX Datasheet Nch 600V 9A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.535 TO-220FM ID 9A PD 48W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Bulk Reel size (mm) - lApp

isc N-Channel MOSFET Transistor R6009KNX FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 535m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

R6009ENJ Nch 600V 9A Power MOSFET Data Sheet lOutline (2) VDSS 600V LPT(S) (SC-83) RDS(on) (Max.) 0.535W ID 9A (1) PD 40W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-fr

R6009JND3 Datasheet Nch 600V 9A Power MOSFET lOutline l TO-252 VDSS 600V RDS(on)(Max.) 0.585 ID 9A PD 125W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPa

R6009JNX Datasheet Nch 600V 9A Power MOSFET lOutline l TO-220FM VDSS 600V RDS(on)(Max.) 0.585 ID 9A PD 53W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPa

R6009ENX Nch 600V 9A Power MOSFET Data Sheet lOutline VDSS 600V TO-220FM RDS(on) (Max.) 0.535W ID 9 (3) PD 40W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead p

R6009JNJ Datasheet Nch 600V 9A Power MOSFET lOutline l LPT(S) VDSS 600V RDS(on)(Max.) 0.585 ID 9A PD 125W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPac

isc N-Channel MOSFET Transistor R6009ENJ FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 535m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

isc N-Channel MOSFET Transistor R6009JND3 FEATURES Drain Current I =9A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 585m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

isc N-Channel MOSFET Transistor R6009JNX FEATURES Drain Current I =9A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 585m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

isc N-Channel MOSFET Transistor R6009ENX FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 535m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

isc N-Channel MOSFET Transistor R6009JNJ FEATURES Drain Current I =9A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 585m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose