R6011KNX Todos los transistores

 ..1. Size:1611K  rohm
 r6011knx.pdf

R6011KNX Datasheet Nch 600V 11A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.39 TO-220FM ID 11A PD 53W lInner circuit l lFeatures l 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackaging specifications l Code Packing C7 G Tube lApplication l C7 Tube

 ..2. Size:252K  inchange semiconductor
 r6011knx.pdf

isc N-Channel MOSFET Transistor R6011KNX FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 390m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.1. Size:750K  rohm
 r6011enj.pdf

R6011ENJ Nch 600V 11A Power MOSFET Data Sheet lOutline (2) VDSS 600V LPT(S) (SC-83) RDS(on) (Max.) 0.390W ID 11A (1) PD 40W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-

 9.2. Size:792K  rohm
 r6011enx.pdf

R6011ENX Nch 600V 11A Power MOSFET Data Sheet lOutline VDSS 600V TO-220FM RDS(on) (Max.) 0.390W ID 11A (3) PD 40W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lea

 9.3. Size:255K  inchange semiconductor
 r6011enj.pdf

isc N-Channel MOSFET Transistor R6011ENJ FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 390m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 9.4. Size:252K  inchange semiconductor
 r6011enx.pdf

isc N-Channel MOSFET Transistor R6011ENX FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 390m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo