All MOSFET. R6011KNX Datasheet

 

R6011KNX Datasheet and Replacement


   Type Designator: R6011KNX
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 630 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
   Package: TO-220F
 

 R6011KNX substitution

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R6011KNX Datasheet (PDF)

 ..1. Size:1611K  rohm
r6011knx.pdf pdf_icon

R6011KNX

R6011KNXDatasheetNch 600V 11A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.39 TO-220FMID11APD 53W lInner circuitllFeaturesl1) Low on-resistance2) Ultra fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tube

 ..2. Size:252K  inchange semiconductor
r6011knx.pdf pdf_icon

R6011KNX

isc N-Channel MOSFET Transistor R6011KNXFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 390m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.1. Size:750K  rohm
r6011enj.pdf pdf_icon

R6011KNX

R6011ENJ Nch 600V 11A Power MOSFET Data SheetlOutline(2) VDSS600VLPT(S)(SC-83)RDS(on) (Max.)0.390WID11A(1) PD40W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-

 9.2. Size:792K  rohm
r6011enx.pdf pdf_icon

R6011KNX

R6011ENX Nch 600V 11A Power MOSFET Data SheetlOutlineVDSS600V TO-220FMRDS(on) (Max.)0.390WID11A(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea

Datasheet: R6007KNX , R6007MNJ , R6009JND3 , R6009JNJ , R6009JNX , R6009KNJ , R6009KNX , R6010MNX , AO3407 , R6015KNJ , R6015KNZ , R6020KNJ , R6020KNX , R6020KNZ , R6020KNZ1 , R6024KNJ , R6024KNX .

Keywords - R6011KNX MOSFET datasheet

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