R6011KNX
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: R6011KNX
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 53
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 11
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 22
nC
trⓘ -
Время нарастания: 25
ns
Cossⓘ - Выходная емкость: 630
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.39
Ohm
Тип корпуса:
TO-220F
Аналог (замена) для R6011KNX
R6011KNX
Datasheet (PDF)
..1. Size:1611K rohm
r6011knx.pdf 
R6011KNXDatasheetNch 600V 11A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.39 TO-220FMID11APD 53W lInner circuitllFeaturesl1) Low on-resistance2) Ultra fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tube
..2. Size:252K inchange semiconductor
r6011knx.pdf 
isc N-Channel MOSFET Transistor R6011KNXFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 390m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
9.1. Size:750K rohm
r6011enj.pdf 
R6011ENJ Nch 600V 11A Power MOSFET Data SheetlOutline(2) VDSS600VLPT(S)(SC-83)RDS(on) (Max.)0.390WID11A(1) PD40W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-
9.2. Size:792K rohm
r6011enx.pdf 
R6011ENX Nch 600V 11A Power MOSFET Data SheetlOutlineVDSS600V TO-220FMRDS(on) (Max.)0.390WID11A(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lea
9.3. Size:255K inchange semiconductor
r6011enj.pdf 
isc N-Channel MOSFET Transistor R6011ENJFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 390m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
9.4. Size:252K inchange semiconductor
r6011enx.pdf 
isc N-Channel MOSFET Transistor R6011ENXFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 390m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
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