R6020KNJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: R6020KNJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 231 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 1350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.196 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET R6020KNJ

R6020KNJ Datasheet (PDF)

..1. Size:1443K rohm
r6020knj.pdf

R6020KNJDatasheetNch 600V 20A Power MOSFETlOutlinel TO-263SVDSS600V SC-83RDS(on)(Max.)0.196 LPT(S)ID20APD231W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbossed Packin

..2. Size:255K inchange semiconductor
r6020knj.pdf

isc N-Channel MOSFET Transistor R6020KNJFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 196m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

7.1. Size:1614K rohm
r6020knx.pdf

R6020KNXDatasheetNch 600V 20A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.196 TO-220FMID20APD 68W lInner circuitllFeaturesl1) Low on-resistance2) Ultra Fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tub

7.2. Size:2176K rohm
r6020knz1.pdf

R6020KNZ1DatasheetNch 600V 20A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.196 TO-247ID20APD 231W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lA

7.3. Size:2192K rohm
r6020knz.pdf

R6020KNZDatasheetNch 600V 20A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.196 TO-3PFID20APD 68W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lApp

7.4. Size:1355K rohm
r6020knz4.pdf

R6020KNZ4DatasheetNch 600V 20A Power MOSFETlOutlinel TO-247VDSS 600VRDS(on)(Max.) 0.196ID 20APD 231W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free lead plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packi

7.5. Size:252K inchange semiconductor
r6020knx.pdf

isc N-Channel MOSFET Transistor R6020KNXFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 196m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

7.6. Size:377K inchange semiconductor
r6020knz1.pdf

isc N-Channel MOSFET Transistor R6020KNZ1FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 196m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

7.7. Size:265K inchange semiconductor
r6020knz.pdf

isc N-Channel MOSFET Transistor R6020KNZFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 196m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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