R6020KNJ MOSFET. Datasheet pdf. Equivalent
Type Designator: R6020KNJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 231 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 40 nC
Rise Time (tr): 30 nS
Drain-Source Capacitance (Cd): 1350 pF
Maximum Drain-Source On-State Resistance (Rds): 0.196 Ohm
Package: TO-263
R6020KNJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R6020KNJ Datasheet (PDF)
r6020knj.pdf
R6020KNJDatasheetNch 600V 20A Power MOSFETlOutlinel TO-263SVDSS600V SC-83RDS(on)(Max.)0.196 LPT(S)ID20APD231W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbossed Packin
r6020knj.pdf
isc N-Channel MOSFET Transistor R6020KNJFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 196m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6020knx.pdf
R6020KNXDatasheetNch 600V 20A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.196 TO-220FMID20APD 68W lInner circuitllFeaturesl1) Low on-resistance2) Ultra Fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tub
r6020knz1.pdf
R6020KNZ1DatasheetNch 600V 20A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.196 TO-247ID20APD 231W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lA
r6020knz.pdf
R6020KNZDatasheetNch 600V 20A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.196 TO-3PFID20APD 68W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lApp
r6020knz4.pdf
R6020KNZ4DatasheetNch 600V 20A Power MOSFETlOutlinel TO-247VDSS 600VRDS(on)(Max.) 0.196ID 20APD 231W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free lead plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packi
r6020knx.pdf
isc N-Channel MOSFET Transistor R6020KNXFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 196m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6020knz1.pdf
isc N-Channel MOSFET Transistor R6020KNZ1FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 196m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
r6020knz.pdf
isc N-Channel MOSFET Transistor R6020KNZFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 196m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: LSE65R180GF
