Справочник MOSFET. R6020KNJ

 

R6020KNJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: R6020KNJ
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 231 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 40 nC
   trⓘ - Время нарастания: 30 ns
   Cossⓘ - Выходная емкость: 1350 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.196 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для R6020KNJ

 

 

R6020KNJ Datasheet (PDF)

 ..1. Size:1443K  rohm
 r6020knj.pdf

R6020KNJ R6020KNJ

R6020KNJDatasheetNch 600V 20A Power MOSFETlOutlinel TO-263SVDSS600V SC-83RDS(on)(Max.)0.196 LPT(S)ID20APD231W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbossed Packin

 ..2. Size:255K  inchange semiconductor
 r6020knj.pdf

R6020KNJ R6020KNJ

isc N-Channel MOSFET Transistor R6020KNJFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 196m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.1. Size:1614K  rohm
 r6020knx.pdf

R6020KNJ R6020KNJ

R6020KNXDatasheetNch 600V 20A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.196 TO-220FMID20APD 68W lInner circuitllFeaturesl1) Low on-resistance2) Ultra Fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tub

 7.2. Size:2176K  rohm
 r6020knz1.pdf

R6020KNJ R6020KNJ

R6020KNZ1DatasheetNch 600V 20A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.196 TO-247ID20APD 231W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lA

 7.3. Size:2192K  rohm
 r6020knz.pdf

R6020KNJ R6020KNJ

R6020KNZDatasheetNch 600V 20A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.196 TO-3PFID20APD 68W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lApp

 7.4. Size:1355K  rohm
 r6020knz4.pdf

R6020KNJ R6020KNJ

R6020KNZ4DatasheetNch 600V 20A Power MOSFETlOutlinel TO-247VDSS 600VRDS(on)(Max.) 0.196ID 20APD 231W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free lead plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packi

 7.5. Size:252K  inchange semiconductor
 r6020knx.pdf

R6020KNJ R6020KNJ

isc N-Channel MOSFET Transistor R6020KNXFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 196m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.6. Size:377K  inchange semiconductor
 r6020knz1.pdf

R6020KNJ R6020KNJ

isc N-Channel MOSFET Transistor R6020KNZ1FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 196m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 7.7. Size:265K  inchange semiconductor
 r6020knz.pdf

R6020KNJ R6020KNJ

isc N-Channel MOSFET Transistor R6020KNZFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 196m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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