R6030KNX MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: R6030KNX
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 86 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 65 nS
   Cossⓘ - Capacitancia de salida: 2000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: TO-220F

Búsqueda de reemplazo de MOSFET R6030KNX

R6030KNX Datasheet (PDF)

..1. Size:1641K rohm
r6030knx.pdf

R6030KNXDatasheetNch 600V 30A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.130 TO-220FMID30APD 86W lInner circuitllFeaturesl1) Low on-resistance2) Ultra fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tub

..2. Size:252K inchange semiconductor
r6030knx.pdf

isc N-Channel MOSFET Transistor R6030KNXFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

7.1. Size:2178K rohm
r6030knz.pdf

R6030KNZDatasheetNch 600V 30A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.130 TO-3PFID30APD 86W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lApp

7.2. Size:2166K rohm
r6030knz1.pdf

R6030KNZ1DatasheetNch 600V 30A Power MOSFETlOutlinelVDSS 600VRDS(on)(Max.)0.130 TO-247ID30APD 305W lInner circuitllFeaturesl1) Low on-resistance.2) Ultra fast switching speed.3) Parallel use is easy.4) Pb-free lead plating ; RoHS compliantlPackaging specificationsl Packing Tube Reel size (mm) -lA

7.3. Size:266K inchange semiconductor
r6030knz.pdf

isc N-Channel MOSFET Transistor R6030KNZFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

7.4. Size:304K inchange semiconductor
r6030knz1.pdf

isc N-Channel MOSFET Transistor R6030KNZ1FEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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