R6030KNX PDF and Equivalents Search

 ..1. Size:1641K  rohm
 r6030knx.pdf

R6030KNX Datasheet Nch 600V 30A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.130 TO-220FM ID 30A PD 86W lInner circuit l lFeatures l 1) Low on-resistance 2) Ultra fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackaging specifications l Code Packing C7 G Tube lApplication l C7 Tub... See More ⇒

 ..2. Size:252K  inchange semiconductor
 r6030knx.pdf

isc N-Channel MOSFET Transistor R6030KNX FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

 7.1. Size:2178K  rohm
 r6030knz.pdf

R6030KNZ Datasheet Nch 600V 30A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.130 TO-3PF ID 30A PD 86W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Tube Reel size (mm) - lApp... See More ⇒

 7.2. Size:2166K  rohm
 r6030knz1.pdf

R6030KNZ1 Datasheet Nch 600V 30A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.130 TO-247 ID 30A PD 305W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Tube Reel size (mm) - lA... See More ⇒

 7.3. Size:266K  inchange semiconductor
 r6030knz.pdf

isc N-Channel MOSFET Transistor R6030KNZ FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

 7.4. Size:304K  inchange semiconductor
 r6030knz1.pdf

isc N-Channel MOSFET Transistor R6030KNZ1 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒