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R6507ENJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: R6507ENJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 78 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.665 Ohm
   Paquete / Cubierta: TO-263
 

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R6507ENJ Datasheet (PDF)

 ..1. Size:1428K  rohm
 r6507enj.pdf pdf_icon

R6507ENJ

R6507ENJDatasheetNch 650V 7A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.665ID 7APD 78W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Emboss

 ..2. Size:254K  inchange semiconductor
 r6507enj.pdf pdf_icon

R6507ENJ

isc N-Channel MOSFET Transistor R6507ENJFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 665m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 7.1. Size:1424K  rohm
 r6507enx.pdf pdf_icon

R6507ENJ

R6507ENXDatasheetNch 650V 7A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 0.665ID 7APD 46W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Bulk

 7.2. Size:251K  inchange semiconductor
 r6507enx.pdf pdf_icon

R6507ENJ

isc N-Channel MOSFET Transistor R6507ENXFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 665m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

MOSTRAR MÁS

Otros transistores... R6030KNX , R6030KNZ , R6030KNZ1 , R6030MNX , R6504ENJ , R6504ENX , R6504KNJ , R6504KNX , IRF630 , R6507ENX , R6507KNJ , R6509ENJ , R6509ENX , R6509KNJ , R6509KNX , R6511ENJ , R6511ENX .

History: QN3107M6N | AP60AN750IN

 

 
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