R6507ENJ MOSFET Datasheet: N-Ch, 650V, 7A. Full specification with pinout and replacement list

R6507ENJ Specs and Replacement

Type Designator: R6507ENJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.665 Ohm

Package: TO-263

R6507ENJ substitution

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R6507ENJ datasheet

..1. Size:1428K rohm
r6507enj.pdf pdf_icon

R6507ENJ Datasheet Nch 650V 7A Power MOSFET lOutline l LPT(S) VDSS 650V RDS(on)(Max.) 0.665 ID 7A PD 78W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Emboss... See More ⇒

..2. Size:254K inchange semiconductor
r6507enj.pdf pdf_icon

isc N-Channel MOSFET Transistor R6507ENJ FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 665m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

7.1. Size:1424K rohm
r6507enx.pdf pdf_icon

R6507ENX Datasheet Nch 650V 7A Power MOSFET lOutline l TO-220FM VDSS 650V RDS(on)(Max.) 0.665 ID 7A PD 46W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Bulk... See More ⇒

7.2. Size:251K inchange semiconductor
r6507enx.pdf pdf_icon

isc N-Channel MOSFET Transistor R6507ENX FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 665m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒