R6507KNJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: R6507KNJ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 78 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 7 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 5 V
Carga de la puerta (Qg): 14.5 nC
Tiempo de subida (tr): 20 nS
Conductancia de drenaje-sustrato (Cd): 470 pF
Resistencia entre drenaje y fuente RDS(on): 0.665 Ohm
Paquete / Cubierta: TO-263
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R6507KNJ Datasheet (PDF)
r6507knj.pdf
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R6507KNJDatasheetNch 650V 7A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.665ID 7APD 78W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing
r6507knj.pdf
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isc N-Channel MOSFET Transistor R6507KNJFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 665m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6507enx.pdf
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R6507ENXDatasheetNch 650V 7A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 0.665ID 7APD 46W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Bulk
r6507enj.pdf
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R6507ENJDatasheetNch 650V 7A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.665ID 7APD 78W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Emboss
r6507enx.pdf
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isc N-Channel MOSFET Transistor R6507ENXFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 665m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6507enj.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc N-Channel MOSFET Transistor R6507ENJFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 665m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
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