R6507KNJ MOSFET. Datasheet pdf. Equivalent
Type Designator: R6507KNJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14.5 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 470 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.665 Ohm
Package: TO-263
R6507KNJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R6507KNJ Datasheet (PDF)
r6507knj.pdf
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R6507KNJDatasheetNch 650V 7A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.665ID 7APD 78W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing
r6507knj.pdf
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isc N-Channel MOSFET Transistor R6507KNJFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 665m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6507enx.pdf
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R6507ENXDatasheetNch 650V 7A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 0.665ID 7APD 46W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Bulk
r6507enj.pdf
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R6507ENJDatasheetNch 650V 7A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.665ID 7APD 78W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Emboss
r6507enx.pdf
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isc N-Channel MOSFET Transistor R6507ENXFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 665m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6507enj.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc N-Channel MOSFET Transistor R6507ENJFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 665m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .