R6507KNJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: R6507KNJ
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 78 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 7 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 14.5 nC
Время нарастания (tr): 20 ns
Выходная емкость (Cd): 470 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.665 Ohm
Тип корпуса: TO-263
R6507KNJ Datasheet (PDF)
r6507knj.pdf
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R6507KNJDatasheetNch 650V 7A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.665ID 7APD 78W lFeaturesllInner circuitl1) Low on-resistance2) Ultra fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing
r6507knj.pdf
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isc N-Channel MOSFET Transistor R6507KNJFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 665m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6507enx.pdf
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R6507ENXDatasheetNch 650V 7A Power MOSFETlOutlinel TO-220FMVDSS 650VRDS(on)(Max.) 0.665ID 7APD 46W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Bulk
r6507enj.pdf
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R6507ENJDatasheetNch 650V 7A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.665ID 7APD 78W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Emboss
r6507enx.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc N-Channel MOSFET Transistor R6507ENXFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 665m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
r6507enj.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
isc N-Channel MOSFET Transistor R6507ENJFEATURESDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 665m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
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