R6507KNJ - описание и поиск аналогов

R6507KNJ Datasheet Nch 650V 7A Power MOSFET lOutline l LPT(S) VDSS 650V RDS(on)(Max.) 0.665 ID 7A PD 78W lFeatures l lInner circuit l 1) Low on-resistance 2) Ultra fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing

isc N-Channel MOSFET Transistor R6507KNJ FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 665m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

R6507ENX Datasheet Nch 650V 7A Power MOSFET lOutline l TO-220FM VDSS 650V RDS(on)(Max.) 0.665 ID 7A PD 46W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Bulk

R6507ENJ Datasheet Nch 650V 7A Power MOSFET lOutline l LPT(S) VDSS 650V RDS(on)(Max.) 0.665 ID 7A PD 78W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Emboss

isc N-Channel MOSFET Transistor R6507ENX FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 665m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

isc N-Channel MOSFET Transistor R6507ENJ FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 665m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos