R6520ENJ Todos los transistores

 ..1. Size:1376K  rohm
 r6520enj.pdf

R6520ENJ Datasheet Nch 650V 20A Power MOSFET lOutline l LPT(S) VDSS 650V RDS(on)(Max.) 0.205 ID 20A PD 231W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Emb

 ..2. Size:254K  inchange semiconductor
 r6520enj.pdf

isc N-Channel MOSFET Transistor R6520ENJ FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 205m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 7.1. Size:2037K  rohm
 r6520enz1.pdf

R6520ENZ1 Datasheet Nch 650V 20A Power MOSFET lOutline l TO-247 VDSS 650V RDS(on)(Max.) 0.205 ID 20A PD 231W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Tube Packing code C9 Marking R6520ENZ1 Basic ordering unit (

 7.2. Size:1852K  rohm
 r6520enx.pdf

R6520ENX Datasheet Nch 650V 20A Power MOSFET lOutline l VDSS 650V RDS(on)(Max.) 0.205 TO-220FM ID 20A PD 68W lInner circuit l lFeatures l 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackaging specifications l Code Packing C7 G Tube lApplication l C7 Tube* Sw

 7.3. Size:2212K  rohm
 r6520enz.pdf

R6520ENZ Datasheet Nch 650V 20A Power MOSFET lOutline l TO-3PF VDSS 650V RDS(on)(Max.) 0.205 ID 20A PD 68W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Tube

 7.4. Size:377K  inchange semiconductor
 r6520enz1.pdf

isc N-Channel MOSFET Transistor R6520ENZ1 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 205m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 7.5. Size:252K  inchange semiconductor
 r6520enx.pdf

isc N-Channel MOSFET Transistor R6520ENX FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 205m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 7.6. Size:265K  inchange semiconductor
 r6520enz.pdf

isc N-Channel MOSFET Transistor R6520ENZ FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 205m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo