R6520ENJ MOSFET. Datasheet pdf. Equivalent
Type Designator: R6520ENJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 231 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 61 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 1500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.205 Ohm
Package: TO-263
R6520ENJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R6520ENJ Datasheet (PDF)
r6520enj.pdf
R6520ENJDatasheetNch 650V 20A Power MOSFETlOutlinel LPT(S)VDSS 650VRDS(on)(Max.) 0.205ID 20APD 231W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Emb
r6520enj.pdf
isc N-Channel MOSFET Transistor R6520ENJFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6520enz1.pdf
R6520ENZ1DatasheetNch 650V 20A Power MOSFETlOutlinel TO-247VDSS 650VRDS(on)(Max.) 0.205ID 20APD 231WlFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tube Packing code C9 Marking R6520ENZ1 Basic ordering unit (
r6520enx.pdf
R6520ENXDatasheetNch 650V 20A Power MOSFETlOutlinelVDSS 650VRDS(on)(Max.)0.205 TO-220FMID20APD 68W lInner circuitllFeaturesl1) Low on-resistance2) Fast switching3) Parallel use is easy4) Pb-free plating ; RoHS compliantlPackaging specificationslCode Packing C7 G TubelApplicationl C7 Tube*Sw
r6520enz.pdf
R6520ENZDatasheetNch 650V 20A Power MOSFETlOutlinel TO-3PFVDSS 650VRDS(on)(Max.) 0.205ID 20APD 68W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Parallel use is easy4) Pb-free plating ; RoHS compliantlApplicationllPackaging specificationslSwitching Packing Tube
r6520enz1.pdf
isc N-Channel MOSFET Transistor R6520ENZ1FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
r6520enx.pdf
isc N-Channel MOSFET Transistor R6520ENXFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
r6520enz.pdf
isc N-Channel MOSFET Transistor R6520ENZFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 205m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: HAT2170H | IRL3803 | SL12N100F | VBM1151N | SI9435DY | IRL3803L
History: HAT2170H | IRL3803 | SL12N100F | VBM1151N | SI9435DY | IRL3803L
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