R6520ENJ - описание и поиск аналогов

R6520ENJ Datasheet Nch 650V 20A Power MOSFET lOutline l LPT(S) VDSS 650V RDS(on)(Max.) 0.205 ID 20A PD 231W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Emb

isc N-Channel MOSFET Transistor R6520ENJ FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 205m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

R6520ENZ1 Datasheet Nch 650V 20A Power MOSFET lOutline l TO-247 VDSS 650V RDS(on)(Max.) 0.205 ID 20A PD 231W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Tube Packing code C9 Marking R6520ENZ1 Basic ordering unit (

R6520ENX Datasheet Nch 650V 20A Power MOSFET lOutline l VDSS 650V RDS(on)(Max.) 0.205 TO-220FM ID 20A PD 68W lInner circuit l lFeatures l 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lPackaging specifications l Code Packing C7 G Tube lApplication l C7 Tube* Sw

R6520ENZ Datasheet Nch 650V 20A Power MOSFET lOutline l TO-3PF VDSS 650V RDS(on)(Max.) 0.205 ID 20A PD 68W lFeatures l lInner circuit l 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lApplication l lPackaging specifications l Switching Packing Tube

isc N-Channel MOSFET Transistor R6520ENZ1 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 205m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

isc N-Channel MOSFET Transistor R6520ENX FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 205m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor R6520ENZ FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 205m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo