R8002ANJ Todos los transistores

 

R8002ANJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: R8002ANJ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 62 W

Tensión drenaje-fuente |Vds|: 800 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 5 V

Carga de compuerta (Qg): 13 nC

Tiempo de elevación (tr): 25 nS

Conductancia de drenaje-sustrato (Cd): 130 pF

Resistencia drenaje-fuente RDS(on): 4.3 Ohm

Empaquetado / Estuche: TO-263

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R8002ANJ Datasheet (PDF)

0.1. r8002anj.pdf Size:1546K _rohm

R8002ANJ
R8002ANJ

R8002ANJDatasheetNch 800V 2A Power MOSFETlOutlinel TO-263SVDSS 800V SC-83RDS(on)(Max.) 4.3 LPT(S)ID 2APD 62W lInner circuitllFeaturesl1) Low on-resistance.2) Fast switching speed.3) Parallel use is easy.4) Pb-free plating ; RoHS compliantlPackaging specificationslEmbossed PackingTape Reel size

0.2. r8002anj.pdf Size:254K _inchange_semiconductor

R8002ANJ
R8002ANJ

isc N-Channel MOSFET Transistor R8002ANJFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 4.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 7.1. r8002anx.pdf Size:1191K _rohm

R8002ANJ
R8002ANJ

Data Sheet10V Drive Nch MOSFET R8002ANX Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1.21) Low on-resistance.1.32) Low input capacitance.0.83) High ESD.(1) Gate2.54 2.54 0.75 2.6(2) Drain(1) (2) (3)(3) Source ApplicationSwitching Packaging specifications Inner circuitPackage BulkType

7.2. r8002anx.pdf Size:251K _inchange_semiconductor

R8002ANJ
R8002ANJ

isc N-Channel MOSFET Transistor R8002ANXFEATURESDrain Current I = 2A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 4.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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