R8002ANJ Todos los transistores

R8002ANJ Datasheet Nch 800V 2A Power MOSFET lOutline l TO-263S VDSS 800V SC-83 RDS(on)(Max.) 4.3 LPT(S) ID 2A PD 62W lInner circuit l lFeatures l 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant lPackaging specifications l Embossed Packing Tape Reel size

isc N-Channel MOSFET Transistor R8002ANJ FEATURES Drain Current I = 24A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 4.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

Data Sheet 10V Drive Nch MOSFET R8002ANX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. (1) Gate 2.54 2.54 0.75 2.6 (2) Drain (1) (2) (3) (3) Source Application Switching Packaging specifications Inner circuit Package Bulk Type

isc N-Channel MOSFET Transistor R8002ANX FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 4.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose