R8002ANJ MOSFET Datasheet: N-Ch, 800V, 2A. Full specification with pinout and replacement list

R8002ANJ Specs and Replacement

   Type Designator: R8002ANJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 62 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.3 Ohm
   Package: TO-263

R8002ANJ substitution

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R8002ANJ datasheet

..1. Size:1546K rohm
r8002anj.pdf pdf_icon

R8002ANJ Datasheet Nch 800V 2A Power MOSFET lOutline l TO-263S VDSS 800V SC-83 RDS(on)(Max.) 4.3 LPT(S) ID 2A PD 62W lInner circuit l lFeatures l 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant lPackaging specifications l Embossed Packing Tape Reel size ... See More ⇒

..2. Size:254K inchange semiconductor
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isc N-Channel MOSFET Transistor R8002ANJ FEATURES Drain Current I = 24A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 4.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

7.1. Size:1191K rohm
r8002anx.pdf pdf_icon

Data Sheet 10V Drive Nch MOSFET R8002ANX Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. (1) Gate 2.54 2.54 0.75 2.6 (2) Drain (1) (2) (3) (3) Source Application Switching Packaging specifications Inner circuit Package Bulk Type ... See More ⇒

7.2. Size:251K inchange semiconductor
r8002anx.pdf pdf_icon

isc N-Channel MOSFET Transistor R8002ANX FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 4.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒

Detailed specifications: R6530KNX , R6530KNX1 , R6530KNZ , R6530KNZ1 , R6535ENZ , R6535ENZ1 , R6535KNZ , R6535KNZ1 , 4N60 , R8005ANJ , R8008ANJ , RJ1G08CGN , RJ1G12BGN , R6020KNZ4 , DJR0417 , R6035KNZ , R6035KNZ1 .