R8005ANJ Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: R8005ANJ  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.1 Ohm

Encapsulados: TO-263

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R8005ANJ datasheet

 ..1. Size:1624K  rohm
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R8005ANJ

R8005ANJ Datasheet Nch 800V 5A Power MOSFET lOutline l TO-263 VDSS 800V SC-83 RDS(on)(Max.) 2.1 LPT(S) ID 5A PD 120W lInner circuit l lFeatures l 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant lPackaging specifications l Embossed Packing Tape Reel size

 ..2. Size:254K  inchange semiconductor
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R8005ANJ

isc N-Channel MOSFET Transistor R8005ANJ FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 2.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 7.1. Size:838K  rohm
 r8005anx.pdf pdf_icon

R8005ANJ

R8005ANX Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V TO-220FM RDS(on) (Max.) 2.08W ID 5A (3) PD 40W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead pl

 7.2. Size:251K  inchange semiconductor
 r8005anx.pdf pdf_icon

R8005ANJ

isc N-Channel MOSFET Transistor R8005ANX FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 2.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

MOSTRAR MÁS

Otros transistores... R6530KNX1, R6530KNZ, R6530KNZ1, R6535ENZ, R6535ENZ1, R6535KNZ, R6535KNZ1, R8002ANJ, IRFP450, R8008ANJ, RJ1G08CGN, RJ1G12BGN, R6020KNZ4, DJR0417, R6035KNZ, R6035KNZ1, R6047MNZ1