R8005ANJ MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: R8005ANJ

..1. Size:1624K rohm
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R8005ANJ Datasheet Nch 800V 5A Power MOSFET lOutline l TO-263 VDSS 800V SC-83 RDS(on)(Max.) 2.1 LPT(S) ID 5A PD 120W lInner circuit l lFeatures l 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant lPackaging specifications l Embossed Packing Tape Reel size

..2. Size:254K inchange semiconductor
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isc N-Channel MOSFET Transistor R8005ANJ FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 2.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

7.1. Size:838K rohm
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R8005ANX Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V TO-220FM RDS(on) (Max.) 2.08W ID 5A (3) PD 40W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead pl

7.2. Size:251K inchange semiconductor
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isc N-Channel MOSFET Transistor R8005ANX FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 2.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

Otros transistores... R6530KNX1 , R6530KNZ , R6530KNZ1 , R6535ENZ , R6535ENZ1 , R6535KNZ , R6535KNZ1 , R8002ANJ , IRFP250 , R8008ANJ , RJ1G08CGN , RJ1G12BGN , R6020KNZ4 , DJR0417 , R6035KNZ , R6035KNZ1 , R6047MNZ1 .