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R8005ANJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: R8005ANJ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 120 W

Tensión drenaje-fuente |Vds|: 800 V

Tensión compuerta-fuente |Vgs|: 30 V

Corriente continua de drenaje |Id|: 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 5 V

Carga de compuerta (Qg): 20 nC

Tiempo de elevación (tr): 30 nS

Conductancia de drenaje-sustrato (Cd): 250 pF

Resistencia drenaje-fuente RDS(on): 2.1 Ohm

Empaquetado / Estuche: TO-263

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R8005ANJ Datasheet (PDF)

0.1. r8005anj.pdf Size:1624K _rohm

R8005ANJ
R8005ANJ

R8005ANJDatasheetNch 800V 5A Power MOSFETlOutlinel TO-263VDSS 800V SC-83RDS(on)(Max.) 2.1 LPT(S)ID 5APD 120W lInner circuitllFeaturesl1) Low on-resistance.2) Fast switching speed.3) Parallel use is easy.4) Pb-free plating ; RoHS compliantlPackaging specificationslEmbossed PackingTape Reel size

0.2. r8005anj.pdf Size:254K _inchange_semiconductor

R8005ANJ
R8005ANJ

isc N-Channel MOSFET Transistor R8005ANJFEATURESDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 2.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 7.1. r8005anx.pdf Size:838K _rohm

R8005ANJ
R8005ANJ

R8005ANX Nch 800V 5A Power MOSFET DatasheetlOutlineVDSS800V TO-220FMRDS(on) (Max.)2.08WID5A(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V.(3) Source 4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead pl

7.2. r8005anx.pdf Size:251K _inchange_semiconductor

R8005ANJ
R8005ANJ

isc N-Channel MOSFET Transistor R8005ANXFEATURESDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 2.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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