R8005ANJ datasheet, подбор замены

 ..1. Size:1624K  rohm
 r8005anj.pdf 

R8005ANJ Datasheet Nch 800V 5A Power MOSFET lOutline l TO-263 VDSS 800V SC-83 RDS(on)(Max.) 2.1 LPT(S) ID 5A PD 120W lInner circuit l lFeatures l 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant lPackaging specifications l Embossed Packing Tape Reel size

 ..2. Size:254K  inchange semiconductor
 r8005anj.pdf 

isc N-Channel MOSFET Transistor R8005ANJ FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 2.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 7.1. Size:838K  rohm
 r8005anx.pdf 

R8005ANX Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V TO-220FM RDS(on) (Max.) 2.08W ID 5A (3) PD 40W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead pl

 7.2. Size:251K  inchange semiconductor
 r8005anx.pdf 

isc N-Channel MOSFET Transistor R8005ANX FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 2.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose