R8005ANJ PDF and Equivalents Search

 

R8005ANJ PDF Specs and Replacement


   Type Designator: R8005ANJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: TO-263
 

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R8005ANJ PDF Specs

 ..1. Size:1624K  rohm
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R8005ANJ

R8005ANJ Datasheet Nch 800V 5A Power MOSFET lOutline l TO-263 VDSS 800V SC-83 RDS(on)(Max.) 2.1 LPT(S) ID 5A PD 120W lInner circuit l lFeatures l 1) Low on-resistance. 2) Fast switching speed. 3) Parallel use is easy. 4) Pb-free plating ; RoHS compliant lPackaging specifications l Embossed Packing Tape Reel size ... See More ⇒

 ..2. Size:254K  inchange semiconductor
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R8005ANJ

isc N-Channel MOSFET Transistor R8005ANJ FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 2.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒

 7.1. Size:838K  rohm
r8005anx.pdf pdf_icon

R8005ANJ

R8005ANX Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V TO-220FM RDS(on) (Max.) 2.08W ID 5A (3) PD 40W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead pl... See More ⇒

 7.2. Size:251K  inchange semiconductor
r8005anx.pdf pdf_icon

R8005ANJ

isc N-Channel MOSFET Transistor R8005ANX FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 2.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒

Detailed specifications: R6530KNX1 , R6530KNZ , R6530KNZ1 , R6535ENZ , R6535ENZ1 , R6535KNZ , R6535KNZ1 , R8002ANJ , IRFP250 , R8008ANJ , RJ1G08CGN , RJ1G12BGN , R6020KNZ4 , DJR0417 , R6035KNZ , R6035KNZ1 , R6047MNZ1 .

Keywords - R8005ANJ MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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