RD3T050CN Todos los transistores

 ..1. Size:1474K  rohm
 rd3t050cn.pdf

RD3T050CN Datasheet Nch 200V 5A Power MOSFET lOutline l VDSS 200V DPAK RDS(on)(Max.) 760m TO-252 ID 5A PD 29W lInner circuit l lFeatures l 1) Low on-resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant lPackaging specifications l Embossed Packi

 ..2. Size:265K  inchange semiconductor
 rd3t050cn.pdf

isc N-Channel MOSFET Transistor RD3T050CN FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Static Drain-Source On-Resistance R = 760m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.1. Size:3540K  rohm
 rd3t075cn.pdf

RD3T075CN Datasheet Nch 200V 7.5A Power MOSFET lOutline l VDSS 200V DPAK RDS(on)(Max.) 325m TO-252 ID 7.5A PD 52W lInner circuit l lFeatures l 1) Low on-resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant lPackaging specifications l Embossed Packing Tape Reel size (mm) 330 lApplication

 9.2. Size:265K  inchange semiconductor
 rd3t075cn.pdf

isc N-Channel MOSFET Transistor RD3T075CN FEATURES Drain Current I = 7.5A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Static Drain-Source On-Resistance R = 325m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu