RD3T050CN PDF and Equivalents Search

 

RD3T050CN Specs and Replacement

Type Designator: RD3T050CN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 33 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.76 Ohm

Package: TO-252

RD3T050CN substitution

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RD3T050CN datasheet

 ..1. Size:1474K  rohm
rd3t050cn.pdf pdf_icon

RD3T050CN

RD3T050CN Datasheet Nch 200V 5A Power MOSFET lOutline l VDSS 200V DPAK RDS(on)(Max.) 760m TO-252 ID 5A PD 29W lInner circuit l lFeatures l 1) Low on-resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant lPackaging specifications l Embossed Packi... See More ⇒

 ..2. Size:265K  inchange semiconductor
rd3t050cn.pdf pdf_icon

RD3T050CN

isc N-Channel MOSFET Transistor RD3T050CN FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Static Drain-Source On-Resistance R = 760m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

 9.1. Size:3540K  rohm
rd3t075cn.pdf pdf_icon

RD3T050CN

RD3T075CN Datasheet Nch 200V 7.5A Power MOSFET lOutline l VDSS 200V DPAK RDS(on)(Max.) 325m TO-252 ID 7.5A PD 52W lInner circuit l lFeatures l 1) Low on-resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant lPackaging specifications l Embossed Packing Tape Reel size (mm) 330 lApplication ... See More ⇒

 9.2. Size:265K  inchange semiconductor
rd3t075cn.pdf pdf_icon

RD3T050CN

isc N-Channel MOSFET Transistor RD3T075CN FEATURES Drain Current I = 7.5A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Static Drain-Source On-Resistance R = 325m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu... See More ⇒

Detailed specifications: RD3L220SN, RD3P050SN, RD3P100SN, RD3P130SP, RD3P175SN, RD3P200SN, RD3S075CN, RD3S100CN, MMIS60R580P, RD3T075CN, RD3T100CN, RD3U040CN, RD3U060CN, RD3U080CN, FHP12N60, FL6L52010L, MDU2653

Keywords - RD3T050CN MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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