AP040N03G Todos los transistores

 

AP040N03G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP040N03G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
   Paquete / Cubierta: DFN5X6

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AP040N03G Datasheet (PDF)

 ..1. Size:1643K  1
ap040n03g.pdf

AP040N03G
AP040N03G

 ..2. Size:1643K  allpower
ap040n03g.pdf

AP040N03G
AP040N03G

 9.1. Size:167K  ape
ap0403gm.pdf

AP040N03G
AP040N03G

AP0403GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 4.5mD Fast Switching Characteristic ID 18.7AGS RoHS Compliant & Halogen-Free SSSO-8DescriptionDAP0403 series are from

 9.2. Size:143K  ape
ap0403gh.pdf

AP040N03G
AP040N03G

AP0403GHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 4.5m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide the GDSdesigner with the best combination of fast switching,TO-252(H)ruggedized device desi

 9.3. Size:93K  ape
ap0403gh-hf.pdf

AP040N03G
AP040N03G

AP0403GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 4.5m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDbest combination of fast switching, rugge

 9.4. Size:90K  ape
ap0403gm-hf.pdf

AP040N03G
AP040N03G

AP0403GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 4.5mD Fast Switching Characteristic ID 18.7AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of

 9.5. Size:837K  cn vbsemi
ap0403gh.pdf

AP040N03G
AP040N03G

AP0403GHwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSO

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History: AP4951GM-HF

 

 
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