AP040N03G Datasheet and Replacement
Type Designator: AP040N03G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: DFN5X6
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AP040N03G Datasheet (PDF)
ap0403gm.pdf

AP0403GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 4.5mD Fast Switching Characteristic ID 18.7AGS RoHS Compliant & Halogen-Free SSSO-8DescriptionDAP0403 series are from
ap0403gh.pdf

AP0403GHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 4.5m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide the GDSdesigner with the best combination of fast switching,TO-252(H)ruggedized device desi
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: MDP14N25CTP | TSM4424CS | LKK47-06C5 | SIHF30N60E | BUK7618-30 | BRCS200P03DP | IRFB3004GPBF
Keywords - AP040N03G MOSFET datasheet
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History: MDP14N25CTP | TSM4424CS | LKK47-06C5 | SIHF30N60E | BUK7618-30 | BRCS200P03DP | IRFB3004GPBF



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