AP10N10K Todos los transistores

 

AP10N10K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP10N10K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 27 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm
   Paquete / Cubierta: TO252
 

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AP10N10K Datasheet (PDF)

 ..1. Size:1565K  allpower
ap10n10k.pdf pdf_icon

AP10N10K

AIIP ERAP10N10K DATA SHEET N-Channel Power MOSFETD BT 100% & UIS Test Voss 100V T Simple Drive Requirement 135m0 Fast Switching Characteristic T lo 10A G T RHS cmpliant & Halgen-FreeDescription AP10N10K series are from Advanced Power innovated design and s T0-252silicon process technology to achieve the lowest possible onresistance and fast switchi

 9.1. Size:218K  ape
ap10n4r5i.pdf pdf_icon

AP10N10K

AP10N4R5IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 4.5m Fast Switching Characteristic ID 70AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Powerinnovated designAP10N4R5 series are from AdvancedPower innovate

 9.2. Size:189K  ape
ap10n70p.pdf pdf_icon

AP10N10K

AP10N70R/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10AGSDescriptionGAP10N70 series are specially designed as main switching devices forDTO-262(R)Suniversal 90~265VAC off-line AC/DC converter applicati

 9.3. Size:172K  ape
ap10n70s.pdf pdf_icon

AP10N10K

AP10N70SRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10AGSDescriptionAP10N70S is specially designed as main switching devices for universalGD90~265VAC off-line AC/DC converter applications. TO-263 type provid

Otros transistores... FHP12N60 , FL6L52010L , MDU2653 , NCE7580 , AP040N03G , AP045N03M , AP050N03Q , AP0903Q , 50N06 , AP120N03K , AP15N10 , AP15P03Q , AP2045K , AP2080K , AP2300 , AP2301 , AP2302 .

History: PSA07N65

 

 
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