AP10N10K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP10N10K Datasheet (PDF)

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AIIP ERAP10N10K DATA SHEET N-Channel Power MOSFETD BT 100% & UIS Test Voss 100V T Simple Drive Requirement 135m0 Fast Switching Characteristic T lo 10A G T RHS cmpliant & Halgen-FreeDescription AP10N10K series are from Advanced Power innovated design and s T0-252silicon process technology to achieve the lowest possible onresistance and fast switchi

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AP10N10S 100V N-Channel Enhancement Mode MOSFET Description The AP10N10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =12.3A DS D R

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AP10N10D 100V N-Channel Enhancement Mode MOSFET Description The AP10N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =10A DS D R

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AP10N15D 150V N-Channel Enhancement Mode MOSFET Description The AP10N15D es advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =10A DS DR

Otros transistores... FHP12N60 , FL6L52010L , MDU2653 , NCE7580 , AP040N03G , AP045N03M , AP050N03Q , AP0903Q , 50N06 , AP120N03K , AP15N10 , AP15P03Q , AP2045K , AP2080K , AP2300 , AP2301 , AP2302 .