AP10N10K - аналоги и даташиты транзистора

 

AP10N10K - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP10N10K
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 20.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 8.1 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 27 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.135 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для AP10N10K

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP10N10K Datasheet (PDF)

 ..1. Size:1565K  allpower
ap10n10k.pdfpdf_icon

AP10N10K

AIIP ERAP10N10K DATA SHEET N-Channel Power MOSFETD BT 100% & UIS Test Voss 100V T Simple Drive Requirement 135m0 Fast Switching Characteristic T lo 10A G T RHS cmpliant & Halgen-FreeDescription AP10N10K series are from Advanced Power innovated design and s T0-252silicon process technology to achieve the lowest possible onresistance and fast switchi

 7.1. Size:1388K  cn apm
ap10n10s.pdfpdf_icon

AP10N10K

AP10N10S 100V N-Channel Enhancement Mode MOSFET Description The AP10N10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =12.3A DS D R

 7.2. Size:1385K  cn apm
ap10n10d.pdfpdf_icon

AP10N10K

AP10N10D 100V N-Channel Enhancement Mode MOSFET Description The AP10N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =10A DS D R

 8.1. Size:1893K  cn apm
ap10n15d.pdfpdf_icon

AP10N10K

AP10N15D 150V N-Channel Enhancement Mode MOSFET Description The AP10N15D es advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =10A DS DR

Другие MOSFET... FHP12N60 , FL6L52010L , MDU2653 , NCE7580 , AP040N03G , AP045N03M , AP050N03Q , AP0903Q , 50N06 , AP120N03K , AP15N10 , AP15P03Q , AP2045K , AP2080K , AP2300 , AP2301 , AP2302 .

 

 
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