AP10N10K PDF and Equivalents Search

 

AP10N10K Specs and Replacement

Type Designator: AP10N10K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 27 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm

Package: TO252

AP10N10K substitution

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AP10N10K datasheet

 ..1. Size:1565K  allpower
 ap10n10k.pdf pdf_icon

AP10N10K

AIIP ER AP10N10K DATA SHEET N-Channel Power MOSFET D B T 100% & UIS Test Voss 100V T Simple Drive Requirement 135m0 Fast Switching Characteristic T lo 10A G T R HS c mpliant & Hal gen-Free Description AP10N10K series are from Advanced Power innovated design and s T0-252 silicon process technology to achieve the lowest possible on resistance and fast switchi... See More ⇒

 7.1. Size:1388K  cn apm
 ap10n10s.pdf pdf_icon

AP10N10K

AP10N10S 100V N-Channel Enhancement Mode MOSFET Description The AP10N10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =12.3A DS D R ... See More ⇒

 7.2. Size:1385K  cn apm
 ap10n10d.pdf pdf_icon

AP10N10K

AP10N10D 100V N-Channel Enhancement Mode MOSFET Description The AP10N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =10A DS D R ... See More ⇒

 8.1. Size:1893K  cn apm
 ap10n15d.pdf pdf_icon

AP10N10K

AP10N15D 150V N-Channel Enhancement Mode MOSFET Description The AP10N15D es advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =10A DS D R ... See More ⇒

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Detailed specifications: FHP12N60, FL6L52010L, MDU2653, NCE7580, AP040N03G, AP045N03M, AP050N03Q, AP0903Q, 50N06, AP120N03K, AP15N10, AP15P03Q, AP2045K, AP2080K, AP2300, AP2301, AP2302

Keywords - AP10N10K MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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