AP15P03Q Todos los transistores

 

AP15P03Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP15P03Q
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 17 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 330 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: DFN3X3
 

 Búsqueda de reemplazo de AP15P03Q MOSFET

   - Selección ⓘ de transistores por parámetros

 

AP15P03Q Datasheet (PDF)

 ..1. Size:1544K  1
ap15p03q.pdf pdf_icon

AP15P03Q

 ..2. Size:1544K  allpower
ap15p03q.pdf pdf_icon

AP15P03Q

 8.1. Size:2066K  cn apm
ap15p04s.pdf pdf_icon

AP15P03Q

AP15P04S -40V P-Channel Enhancement Mode MOSFET Description The AP15P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-15.8A DS D R

 8.2. Size:1789K  cn apm
ap15p06df.pdf pdf_icon

AP15P03Q

AP15P06DF -60V P-Channel Enhancement Mode MOSFET Description The AP15P06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-15A DS DR

Otros transistores... NCE7580 , AP040N03G , AP045N03M , AP050N03Q , AP0903Q , AP10N10K , AP120N03K , AP15N10 , IRF640 , AP2045K , AP2080K , AP2300 , AP2301 , AP2302 , AP2302B , AP2305 , AP2310S .

History: IRL630PBF

 

 
Back to Top

 


 
.