AP15P03Q Specs and Replacement
Type Designator: AP15P03Q
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 17 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 330 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: DFN3X3
AP15P03Q substitution
- MOSFET ⓘ Cross-Reference Search
AP15P03Q datasheet
ap15p04s.pdf
AP15P04S -40V P-Channel Enhancement Mode MOSFET Description The AP15P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-15.8A DS D R ... See More ⇒
ap15p06df.pdf
AP15P06DF -60V P-Channel Enhancement Mode MOSFET Description The AP15P06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-15A DS D R ... See More ⇒
Detailed specifications: NCE7580, AP040N03G, AP045N03M, AP050N03Q, AP0903Q, AP10N10K, AP120N03K, AP15N10, IRF640, AP2045K, AP2080K, AP2300, AP2301, AP2302, AP2302B, AP2305, AP2310S
Keywords - AP15P03Q MOSFET specs
AP15P03Q cross reference
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