AP15P03Q MOSFET. Datasheet pdf. Equivalent
Type Designator: AP15P03Q
Marking Code: 15P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 17 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
Cossⓘ - Output Capacitance: 330 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: DFN3X3
AP15P03Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP15P03Q Datasheet (PDF)
ap15p15gm-hf.pdf
AP15P15GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -140VDDD Simple Drive Requirement RDS(ON) 180mD Fast Switching Characteristic ID -2.7AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination
ap15p15gh-hf.pdf
AP15P15GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -140V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide theDSdesigner with the best combination of fast switching
ap15p10gh-hf ap15p10gj-hf.pdf
AP15P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionGDThe TO-252 package is widely preferred for all commercial-industrial STO-252(H)surface mount app
ap15p15gh.pdf
AP15P15GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -140V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the GDSbest combination of fast switching,
ap15p10gh.pdf
AP15P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionAP15P10 series are from Advanced Power innovated design and silicon GDSTO-252(H)process technology
ap15p15gp-hf.pdf
AP15P15GP-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -140V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedi
ap15p10gp ap15p10gs.pdf
AP15P10GS/PRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DSTO-263(S)r
ap15p10gj.pdf
AP15P10GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionAP15P10 series are from Advanced Power innovated design and silicon GDSTO-252(H)process technology
ap15p10gi.pdf
AP15P10GIHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID3 -8.3AG RoHS Compliant & Halogen-FreeSDescriptionAP15P10 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest
ap15p15gm.pdf
AP15P15GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -140VDDD Simple Drive Requirement RDS(ON) 180mD Fast Switching Characteristic ID -2.7AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP15P15 series are from Advanced Power innovated designand silicon process tech
ap15p10gp-hf ap15p10gs-hf.pdf
AP15P10GS/P-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS -100V Simple Drive Requirement RDS(ON) 230m Fast Switching Characteristic ID -15AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,D
ap15p15gi.pdf
AP15P15GIRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -140V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -15AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistanc
ap15p10gh.pdf
AP15P10GHwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.250 at VGS = - 10 V - 8.8 TrenchFET Power MOSFET- 100 11.70.280 at VGS = - 4.5 V - 8.0 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSTO-251 Power Switch
ap15p10gj.pdf
AP15P10GJwww.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.215 at VGS = - 10 V - 12 TrenchFET Power MOSFET- 100 110.234 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch DC/DC Conv
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