AP2N7002 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2N7002
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.45 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 8 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de AP2N7002 MOSFET
AP2N7002 Datasheet (PDF)
ap2n7002k-hf.pdf
AP2N7002K-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 2 Surface Mount Device ID 450mAS RoHS Compliant & Halogen-FreeSOT-23GDescriptionDAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resist
ap2n7002ku.pdf
AP2N7002KUHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 2 Surface Mount Device ID 270mAS RoHS Compliant & Halogen-FreeSOT-323GDDescriptionAP2N7002 series are from Advanced Power innovated designGand silicon process technology to achieve th
ap2n7002a.pdf
AP2N7002A 60V N-Channel Enhancement Mode MOSFET Description The AP2N7002A uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =0.3A DS DR
Otros transistores... AP2080K , AP2300 , AP2301 , AP2302 , AP2302B , AP2305 , AP2310S , AP2312 , AON6414A , AP3010 , AP3020 , AP30H100KA , AP30H150KA , AP30P30Q , AP3400 , AP3400S , AP3401 .
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