AP2N7002 Datasheet and Replacement
Type Designator: AP2N7002
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SOT23
AP2N7002 substitution
AP2N7002 Datasheet (PDF)
ap2n7002k-hf.pdf

AP2N7002K-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 2 Surface Mount Device ID 450mAS RoHS Compliant & Halogen-FreeSOT-23GDescriptionDAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resist
ap2n7002ku.pdf

AP2N7002KUHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 2 Surface Mount Device ID 270mAS RoHS Compliant & Halogen-FreeSOT-323GDDescriptionAP2N7002 series are from Advanced Power innovated designGand silicon process technology to achieve th
ap2n7002a.pdf

AP2N7002A 60V N-Channel Enhancement Mode MOSFET Description The AP2N7002A uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =0.3A DS DR
Datasheet: AP2080K , AP2300 , AP2301 , AP2302 , AP2302B , AP2305 , AP2310S , AP2312 , P55NF06 , AP3010 , AP3020 , AP30H100KA , AP30H150KA , AP30P30Q , AP3400 , AP3400S , AP3401 .
History: SWP10N50K | SWP10N65K | 2SJ383 | UPA2352BT1P | SVF2N65N | APT6011LVFR | TPCA8022-H
Keywords - AP2N7002 MOSFET datasheet
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History: SWP10N50K | SWP10N65K | 2SJ383 | UPA2352BT1P | SVF2N65N | APT6011LVFR | TPCA8022-H



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