AP30P30Q MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP30P30Q
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 40 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 430 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Encapsulados: DFN3X3
Búsqueda de reemplazo de AP30P30Q MOSFET
- Selecciónⓘ de transistores por parámetros
AP30P30Q datasheet
9.1. Size:93K ape
ap30p10gs.pdf 
AP30P10GS RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance
9.2. Size:94K ape
ap30p10gs-hf.pdf
AP30P10GS-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz
9.3. Size:151K ape
ap30p10gi.pdf
AP30P10GI RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance
9.4. Size:185K ape
ap30p10gh.pdf
AP30P10GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G RoHS Compliant & Halogen-Free S Description AP30P10 series are from Advanced Power innovat
9.5. Size:147K ape
ap30p10gp.pdf
AP30P10GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G RoHS Compliant & Halogen-Free S Description AP30P10 series are from Advanced Power innovat
9.6. Size:96K ape
ap30p10gh-hf.pdf
AP30P10GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz
9.7. Size:94K ape
ap30p10gp-hf.pdf
AP30P10GP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi
9.10. Size:1462K cn apm
ap30p03df.pdf
AP30P03DF 30V P-Channel Enhancement Mode MOSFET Description The AP30P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-30A DS D R
9.11. Size:1439K cn apm
ap30p10d.pdf
AP30P10D -100V P-Channel Enhancement Mode MOSFET Description The AP30P10P uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-30A DS D R
9.12. Size:1439K cn apm
ap30p10p.pdf
AP30P10D -100V P-Channel Enhancement Mode MOSFET Description The AP30P10P uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -100V I =-30A DS D R
9.13. Size:858K cn apm
ap30p03d.pdf
AP30P03D -30V P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 , unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V =0V , I =-250uA -30 --- --- V GS D BVDSS/ TJ BV Temperature Coefficient DSS Reference to 25 , I =-1mA --- -0.022 --- D V/ V =-10V , I =-15A --- 18 20 GS D m RDS(O
9.15. Size:1398K cn apm
ap30p02df.pdf
AP30P02DF -20V P-Channel Enhancement Mode MOSFET Description The AP30P02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-30A DS D R
9.16. Size:1655K cn apm
ap30p06d.pdf
AP30P06D -60V P-Channel Enhancement Mode MOSFET Description The AP30P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-30A DS D R
Otros transistores... AP2305
, AP2310S
, AP2312
, AP2N7002
, AP3010
, AP3020
, AP30H100KA
, AP30H150KA
, 7N65
, AP3400
, AP3400S
, AP3401
, AP3407
, AP3407S
, AP4435
, AP4438
, AP4606CS
.
History: ELM544599A
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