AP30P30Q Datasheet and Replacement
Type Designator: AP30P30Q
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 430 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: DFN3X3
AP30P30Q substitution
AP30P30Q Datasheet (PDF)
ap30p10gs.pdf

AP30P10GSRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance
ap30p10gs-hf.pdf

AP30P10GS-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz
Datasheet: AP2305 , AP2310S , AP2312 , AP2N7002 , AP3010 , AP3020 , AP30H100KA , AP30H150KA , STP75NF75 , AP3400 , AP3400S , AP3401 , AP3407 , AP3407S , AP4435 , AP4438 , AP4606CS .
History: SWI1N55D | PJM2300NSA | CES2317 | SI6968BEDQ | SMG2370N
Keywords - AP30P30Q MOSFET datasheet
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History: SWI1N55D | PJM2300NSA | CES2317 | SI6968BEDQ | SMG2370N



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